Characteristics of size dependent conductivity of the CNT-interconnects formed by low temperature process

0026-2714/$ see front matter 2013 Elsevier Ltd. A http://dx.doi.org/10.1016/j.microrel.2013.03.001 ⇑ Corresponding author. Tel.: +886 734 747 0177; f E-mail address: [email protected] (W.-C. Chiu) In this paper, a simple and low temperature fabrication process, slow spin rate coating and dry etching, is proposed to construct the CNT-interconnects for future VLSI interconnect applications. Two sets of CNTinterconnects named width and length varying interconnects were fabricated to investigate the characterization of size dependent conductivity of CNT-interconnects. Not only the amount of the CNT solution spin-coated for forming the CNT networks but also the area of CNT-interconnect regime would affect the conductance, variation, and conductive probability of CNT-interconnects. The yield of working CNT-interconnects does not show direct relation with the conductive probability or the amount of the CNT solution for CNT network formation. Based on the percolation theory, we characterize the average conductance of size-varying CNT-interconnects by three regions: percolation region, power region and linear region. In addition, as the density within a specified CNT-interconnect regime accumulates, the conductive behavior would be eventually characterized as a conventional resistor. 2013 Elsevier Ltd. All rights reserved.